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Model MRF6S21100NBR1
Description MOSFET RF N-CH 28V 23W TO272-4
Product QR code
Brand: NXP
Packaging TO-272
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
622.89  yuan 622.89yuan
1+:
$ 710.0946
10+:
$ 685.1790
50+:
$ 682.0646
100+:
$ 678.9501
150+:
$ 673.9670
250+:
$ 669.6068
500+:
$ 665.2465
1000+:
$ 660.2634
Quantity
1+
10+
50+
100+
150+
Price
$710.0946
$685.1790
$682.0646
$678.9501
$673.9670
Price $ 710.0946 $ 685.1790 $ 682.0646 $ 678.9501 $ 673.9670
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8239) Minimum order quantity(1)
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Technical parameters/frequency: 2.11GHz ~ 2.16GHz

Technical parameters/rated voltage (DC): 28.0 V

Technical parameters/rated current: 10 µA

Technical parameters/halogen-free state: Halogen Free

Technical parameters/drain source voltage (Vds): 28.0 V

Technical parameters/output power: 23 W

Technical parameters/gain: 14.5 dB

Technical parameters/test current: 1.05 A

Technical parameters/rated voltage: 68 V

Encapsulation parameters/installation method: Flange

Encapsulation parameters/Encapsulation: TO-272

External dimensions/packaging: TO-272

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF8S21100HSR3 MRF8S21100HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21100HSR3 MRF8S21100HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HR3 MRF8S21120HR3 Freescale 功能相似 NI-780
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HR3 MRF8S21120HR3 NXP 功能相似 NI-780H-2L
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HSR3 MRF8S21120HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HSR3 MRF8S21120HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF

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