Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/maximum source drain voltage VdsDrain Source Voltage: －30 V
Other/Gate Source Breakdown Voltage V (BR) GSGate Source Voltage: 30 V
Other/drain current (Vgs=0V) IDSSDrain Current: －2.0~－25.0mA
Other/Off Voltage Vgs (off) Gate Source Cut off Voltage: 1.0~4.0V
Other/dissipative power PdPower Dissipation: 225mW/0.225W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ176
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON Semiconductor MMBFJ176 P通道 JFET 晶体管, Vds=15 V, Idss: -2 → -25mA, 3引脚 SOT-23封装
|
||
MMBFJ176
|
National Semiconductor | 类似代替 | SOT-23 |
ON Semiconductor MMBFJ176 P通道 JFET 晶体管, Vds=15 V, Idss: -2 → -25mA, 3引脚 SOT-23封装
|
||
MMBFJ176
|
Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor MMBFJ176 P通道 JFET 晶体管, Vds=15 V, Idss: -2 → -25mA, 3引脚 SOT-23封装
|
||
PMBFJ174,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ174,215 晶体管, JFET, JFET, 30 V, 20 mA, 135 mA, 10 V, SOT-23, JFET
|
||
SST174-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
JFET Transistor, JFET, JFET, 30V, -20mA, -135mA, 10V, TO-236
|
||
SST174-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET Transistor, JFET, JFET, 30V, -20mA, -135mA, 10V, TO-236
|
||
SST174-T1-E3
|
VISHAY | 功能相似 | SOT-23 |
JFET N-CH 30V 20mA SOT-23
|
||
SST174-T1-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET N-CH 30V 20mA SOT-23
|
||
SST174-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
JFET N-CH 30V 20mA SOT-23
|
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