Technical parameters/drain source resistance: | 85 Ω |
|
Technical parameters/breakdown voltage: | 30 V |
|
Technical parameters/dissipated power (Max): | 350 mW |
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Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ175
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
|
||
MMBFJ175
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
|
||
MMBFJ176
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ176 晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET
|
||
MMBFJ176
|
National Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBFJ176 晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET
|
||
MMBFJ176
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ176 晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET
|
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