Technical parameters/drain source resistance: 125 Ω
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage: 30 V
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ175
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
|
||
MMBFJ175
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
|
||
|
|
Allied Components | 完全替代 |
MMBFJ175LT1 P沟道结型场效应管 25 V －7.0~－60.0mA SOT-23 marking/标记 6W
|
|||
MMBFJ175LT1
|
ON Semiconductor | 完全替代 | SOT-23-3 |
MMBFJ175LT1 P沟道结型场效应管 25 V －7.0~－60.0mA SOT-23 marking/标记 6W
|
||
|
|
Motorola | 完全替代 |
ON SEMICONDUCTOR MMBFJ175LT1G. 晶体管, JFET, SOT-23封装
|
|||
PMBFJ174,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ174,215 晶体管, JFET, JFET, 30 V, 20 mA, 135 mA, 10 V, SOT-23, JFET
|
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