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Model PMBFJ174,215

Description NXP PMBFJ174,215 Transistor, JFET, JFET, 30 V, 20 mA, 135 mA, 10 V, SOT-23, JFET

Brand: NXP

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/breakdown voltage:	30.0 V\|30 V
Technical parameters/drain source resistance:	85 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	300 mW
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30 V
Technical parameters/breakdown voltage of gate source:	30 V
Technical parameters/Input capacitance (Ciss):	8pF @10V(Vgs)
Technical parameters/rated power (Max):	300 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	300 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	3 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, Industrial,
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17