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Model MMBFJ175LT1
Description MMBFJ175LT1 PChannel junction field-effect transistor 25 V-7.0~-60.0mA SOT-23 marking/marking 6W
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
1.15  yuan 1.15yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3956) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-25.0 V

 

Technical parameters/rated current:

-60.0 mA

 

Technical parameters/drain source resistance:

125 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/drain source voltage (Vds):

25.0 V

 

Technical parameters/breakdown voltage of gate source:

30.0 V

 

Technical parameters/Continuous drain current (Ids):

60.0 mA

 

Technical parameters/breakdown voltage:

30 V

 

Technical parameters/Input capacitance (Ciss):

11pF @10V(Vgs)

 

Technical parameters/rated power (Max):

225 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MMBFJ175 MMBFJ175 Fairchild 功能相似 SOT-23-3
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
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MMBFJ175 MMBFJ175 ON Semiconductor 功能相似 SOT-23-3
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
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MMBFJ175LT1G MMBFJ175LT1G Motorola 类似代替
ON SEMICONDUCTOR MMBFJ175LT1G. 晶体管, JFET, SOT-23封装

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