Technical parameters/drain source resistance: 125 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/height: 1.02 mm
External dimensions/packaging: TO-236
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ175
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
|
||
MMBFJ175
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ175. 场效应管, JFET, P沟道
|
||
MMBFJ176
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ176 晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET
|
||
MMBFJ176
|
National Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBFJ176 晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET
|
||
MMBFJ176
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ176 晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, SOT-23, JFET
|
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