Technical parameters/frequency: 10 MHz
Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.56 W
Technical parameters/gain bandwidth product: 10 MHz
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 30 @300mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/rated power (Max): 1.56 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 15 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH50TF
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR KSH50TF 单晶体管 双极, NPN, 400 V, 10 MHz, 15 W, 1 A, 10 hFE
|
||
MJD50
|
ON Semiconductor | 类似代替 | TO-252-3 |
高电压功率晶体管 High Voltage Power Transistors
|
||
MJD50T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD50T4G 单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 15 W, 1 A, 30 hFE
|
||
NJVMJD50T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
双极晶体管 - 双极结型晶体管(BJT) BIP NPN 1A 400V TR
|
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