Technical parameters/frequency: | 10 MHz |
|
Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 1.56 W |
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Technical parameters/breakdown voltage (collector emitter): | 400 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 30 @300mA, 10V |
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Technical parameters/maximum current amplification factor (hFE): | 150 @300mA, 10V |
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Technical parameters/rated power (Max): | 1.56 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 1560 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD50T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD50T4G 单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 15 W, 1 A, 30 hFE
|
||
MJD50TF
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON Semiconductor MJD50TF , NPN 晶体管, 1 A, Vce=400 V, HFE:10, 3引脚 DPAK (TO-252)封装
|
||
MJD50TF
|
Fairchild | 完全替代 | TO-252-3 |
ON Semiconductor MJD50TF , NPN 晶体管, 1 A, Vce=400 V, HFE:10, 3引脚 DPAK (TO-252)封装
|
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