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Model MJD50T4G
Description ON SEMICONDUCTOR MJD50T4G 单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 15 W, 1 A, 30 hFE
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.95  yuan 1.95yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4033) Minimum order quantity(1)
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Technical parameters/frequency:

10 MHz

 

Technical parameters/rated voltage (DC):

400 V

 

Technical parameters/rated current:

1.00 A

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

15 W

 

Technical parameters/breakdown voltage (collector emitter):

400 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

30 @300mA, 10V

 

Technical parameters/rated power (Max):

1.56 W

 

Technical parameters/DC current gain (hFE):

30

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1560 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.38 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Audio, Industrial, Power Management, Automotive, Power Management, Automotive

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJD50 MJD50 ON Semiconductor 完全替代 TO-252-3
高电压功率晶体管 High Voltage Power Transistors
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