Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 30 @300mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/rated power (Max): 1.56 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH50TF
|
Fairchild | 完全替代 | TO-252-3 |
ON Semiconductor KSH50TF , NPN 晶体管, 1 A, Vce=400 V, HFE:10, 3引脚 DPAK (TO-252)封装
|
||
MJD50T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON SEMICONDUCTOR MJD50T4G 单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 15 W, 1 A, 30 hFE
|
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