Technical parameters/frequency: | 10 MHz |
|
Technical parameters/dissipated power: | 1.56 W |
|
Technical parameters/breakdown voltage (collector emitter): | 400 V |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @300mA, 10V |
|
Technical parameters/rated power (Max): | 1.56 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 1560 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Length: | 6.73 mm |
|
Dimensions/Width: | 6.22 mm |
|
Dimensions/Height: | 2.38 mm |
|
Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH50TF
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR KSH50TF 单晶体管 双极, NPN, 400 V, 10 MHz, 15 W, 1 A, 10 hFE
|
||
MJD50
|
ON Semiconductor | 类似代替 | TO-252-3 |
高电压功率晶体管 High Voltage Power Transistors
|
||
MJD50T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD50T4G 单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 15 W, 1 A, 30 hFE
|
||
NJVMJD50T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
双极晶体管 - 双极结型晶体管(BJT) BIP NPN 1A 400V TR
|
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