Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 6.00 A
Technical parameters/drain source resistance: 460 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.75W (Ta), 50W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/rise time: 29.0 ns
Technical parameters/Input capacitance (Ciss): 480pF @25V(Vds)
Technical parameters/rated power (Max): 1.75 W
Technical parameters/dissipated power (Max): 1.75W (Ta), 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTD5P06VT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MTD5P06VT4G 晶体管, MOSFET, P沟道, 5 A, -60 V, 0.34 ohm, 10 V, 2.8 V
|
||
MTD6N20ET4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MTD6N20ET4G 晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V
|
||
MTD6P10E
|
ON Semiconductor | 功能相似 | TO-252-3 |
DPAK P-CH 100V 6A
|
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