Technical parameters/rated voltage (DC): | -60.0 V |
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Technical parameters/rated current: | -5.00 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.34 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 40 W |
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Technical parameters/threshold voltage: | 2.8 V |
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Technical parameters/Input capacitance: | 510 pF |
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Technical parameters/gate charge: | 20.0 nC |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±15.0 V |
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Technical parameters/Continuous drain current (Ids): | 5.00 A |
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Technical parameters/rise time: | 26 ns |
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Technical parameters/Input capacitance (Ciss): | 510pF @25V(Vds) |
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Technical parameters/rated power (Max): | 40 W |
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Technical parameters/descent time: | 19 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.1W (Ta), 40W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTD6N20ET4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MTD6N20ET4G 晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V
|
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MTD6P10E
|
ON Semiconductor | 类似代替 | TO-252-3 |
DPAK P-CH 100V 6A
|
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