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Model MTD6N20ET4G
Description ON SEMICONDUCTOR MTD6N20ET4G 晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.78  yuan 2.78yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5142) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

6.00 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.46 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

50 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/Input capacitance:

480 pF

 

Technical parameters/gate charge:

21.0 nC

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

6.00 A

 

Technical parameters/rise time:

29 ns

 

Technical parameters/Input capacitance (Ciss):

480pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.75 W

 

Technical parameters/descent time:

20 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.75W (Ta), 50W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.38 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

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