Technical parameters/rated voltage (DC): | -100 V |
|
Technical parameters/rated current: | -6.00 A |
|
Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 1.75W (Ta), 50W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 6.00 A |
|
Technical parameters/rise time: | 29 ns |
|
Technical parameters/Input capacitance (Ciss): | 840pF @25V(Vds) |
|
Technical parameters/descent time: | 9 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.75W (Ta), 50W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Rail |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTD5P06VT4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MTD5P06VT4G 晶体管, MOSFET, P沟道, 5 A, -60 V, 0.34 ohm, 10 V, 2.8 V
|
||
MTD6N20ET4
|
ON Semiconductor | 功能相似 | TO-252-3 |
功率MOSFET 6安培， 200伏特N沟道DPAK Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
|
||
MTD6N20ET4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MTD6N20ET4G 晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V
|
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