Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 250 @100µA, 5V
Technical parameters/Maximum current amplification factor (hFE): 700
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC556ABU
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor BC556ABU , PNP 晶体管, 100 mA, Vce=65 V, HFE:110, 10 MHz, 3引脚 TO-92封装
|
||
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
||
MMBT2907AWT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
ON SEMICONDUCTOR MMBT2907AWT1G 单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 150 mW, -600 mA, 50 hFE
|
||
PN4250A
|
ON Semiconductor | 类似代替 | TO-226-3 |
BJT PNP Low Noise
|
||
PN4250A
|
Fairchild | 类似代替 | TO-226-3 |
BJT PNP Low Noise
|
||
PN4250A
|
Central Semiconductor | 类似代替 | TO-226-3 |
BJT PNP Low Noise
|
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