Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 250 @100µA, 5V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC556ABU
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor BC556ABU , PNP 晶体管, 100 mA, Vce=65 V, HFE:110, 10 MHz, 3引脚 TO-92封装
|
||
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
||
MMBT2907AWT1G
|
ON Semiconductor | 功能相似 | SC-70-3 |
ON SEMICONDUCTOR MMBT2907AWT1G 单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 150 mW, -600 mA, 50 hFE
|
||
PN4250A
|
ON Semiconductor | 类似代替 | TO-226-3 |
BJT PNP Low Noise
|
||
PN4250A
|
Fairchild | 类似代替 | TO-226-3 |
BJT PNP Low Noise
|
||
PN4250A
|
Central Semiconductor | 类似代替 | TO-226-3 |
BJT PNP Low Noise
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review