Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.022 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 5A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 900pF @10V(Vds)
Technical parameters/rated power (Max): 1.25 W
Technical parameters/descent time: 100 ns
Technical parameters/dissipated power (Max): 1.25W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC637BNZ
|
Freescale | 功能相似 |
FAIRCHILD SEMICONDUCTOR FDC637BNZ 晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
|
|||
FDC637BNZ
|
ON Semiconductor | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC637BNZ 晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
|
||
FDC637BNZ
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC637BNZ 晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
|
||
NTGS3130NT1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
N 通道功率 MOSFET，20V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
RQ6C050UNTR
|
ROHM Semiconductor | 完全替代 | TSOT-23-6 |
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1 V
|
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