Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.022 Ω
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 900pF @10V(Vds)
Technical parameters/descent time: 100 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.25W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RUQ050N02TR
|
ROHM Semiconductor | 完全替代 | TSOT-23-6 |
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review