FDC637BNZ In Stock|PDF|Datasheet|Price|Agent[FDC637BNZ Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model FDC637BNZ

Description FAIRCHILD SEMICONDUCTOR FDC637BNZ 晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV

Brand: Fairchild

Packaging TSOT-23-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	0.021 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.6 W
Technical parameters/threshold voltage:	800 mV
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Continuous drain current (Ids):	6.2A
Technical parameters/rise time:	6 ns
Technical parameters/Input capacitance (Ciss):	895pF @10V(Vds)
Technical parameters/rated power (Max):	800 mW
Technical parameters/descent time:	6 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1.6W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	TSOT-23-6
Dimensions/Length:	3 mm
Dimensions/Width:	1.7 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	TSOT-23-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FDC634P	ON Semiconductor	类似代替	TSOT-23-6	ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDC634P, 3.5 A, Vds=20 V, 6引脚 SOT-23封装	PDF
FDC655BN	Rochester	类似代替	SSOT	FAIRCHILD SEMICONDUCTOR FDC655BN 晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
FDC655BN	ON Semiconductor	类似代替	TSOT-23-6	FAIRCHILD SEMICONDUCTOR FDC655BN 晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V	PDF
FDC655BN	Fairchild	类似代替	TSOT-23-6	FAIRCHILD SEMICONDUCTOR FDC655BN 晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V	PDF
FDC658AP	ON Semiconductor	类似代替	TSOT-23-6	FDC658P 系列 30 V 50 mOhm 单 P 沟道逻辑电平 PowerTrench Mosfet SSOT-6	PDF
FDC658AP	Fairchild	类似代替	TSOT-23-6	FDC658P 系列 30 V 50 mOhm 单 P 沟道逻辑电平 PowerTrench Mosfet SSOT-6	PDF
FDC658AP	Rochester	类似代替	SOT	FDC658P 系列 30 V 50 mOhm 单 P 沟道逻辑电平 PowerTrench Mosfet SSOT-6	PDF
NTUD3170NZT5G	ON Semiconductor	功能相似	SOT-963-6	ON SEMICONDUCTOR NTUD3170NZT5G. 场效应管, MOSFET, 双N沟道, 20V, SOT-963