Technical parameters/dissipated power: 340mW (Ta), 370mW (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 100pF @15V(Vds)
Technical parameters/dissipated power (Max): 340mW (Ta), 370mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/packaging: SC-70-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1300BDL-T1-E3
|
Vishay Siliconix | 功能相似 | SC-70-3 |
MOSFET N-CH 20V 400mA SOT323-3
|
||
SI1308EDL-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOT-323-3 |
MOSFET N-CH 30V 1.4A SOT323
|
||
SI1308EDL-T1-GE3
|
VISHAY | 功能相似 | SOT-323-3 |
MOSFET N-CH 30V 1.4A SOT323
|
||
SI1308EDL-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-323-3 |
MOSFET N-CH 30V 1.4A SOT323
|
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