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Model SI1308EDL-T1-GE3
Description VISHAY SI1308EDL-T1-GE3 晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-323-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.38  yuan 2.38yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1597) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.11 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

500 mW

 

Technical parameters/threshold voltage:

600 mV

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Input capacitance (Ciss):

105pF @15V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

0.4 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-323-3

 

Dimensions/Length:

2.2 mm

 

Dimensions/Width:

1.35 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

SOT-323-3

 

Physical parameters/operating temperature:

-50℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial, Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1300BDL-T1-E3 SI1300BDL-T1-E3 Vishay Siliconix 功能相似 SC-70-3
MOSFET N-CH 20V 400mA SOT323-3
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