Technical parameters/drain source resistance: 0.65 Ω
Technical parameters/dissipated power: 200 mW
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 35pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 190mW (Ta), 200mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SC-70-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1308EDL-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOT-323-3 |
MOSFET N-CH 30V 1.4A SOT323
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||
SI1308EDL-T1-GE3
|
VISHAY | 功能相似 | SOT-323-3 |
MOSFET N-CH 30V 1.4A SOT323
|
||
SI1308EDL-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-323-3 |
MOSFET N-CH 30V 1.4A SOT323
|
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