Technical parameters/drain source resistance: 0.11 Ω
Technical parameters/dissipated power: 500 mW
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 105pF @15V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/dissipated power (Max): 400mW (Ta), 500mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.1 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1300BDL-T1-E3
|
Vishay Siliconix | 功能相似 | SC-70-3 |
MOSFET N-CH 20V 400mA SOT323-3
|
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