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Model SI2304DS-T1
Description Trans MOSFET N-CH 30V 2.5A 3Pin TO-236 T/R
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Brand: Vishay Semiconductor
Packaging TO-236
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7174) Minimum order quantity(1)
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Technical parameters/drain source resistance: 117 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 2.50 A

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/packaging: TO-236

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Semiconductor 功能相似 SOT-23-3
TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
PDF
SI2304BDS-T1-E3 SI2304BDS-T1-E3 VISHAY 功能相似 SOT-23-3
TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
PDF
SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Siliconix 功能相似 SOT-23-3
TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
PDF
SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 Vishay Semiconductor 类似代替 TO-236
Trans MOSFET N-CH 30V 2.6A 3Pin SOT-23 T/R
PDF
SI2304DS SI2304DS Philips 功能相似
N-channel enhancement mode field-effect transistor
SI2304DS SI2304DS VISHAY 功能相似 SOT-23
N-channel enhancement mode field-effect transistor
PDF

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