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Description VISHAY SI1012X-T1-GE3 Field effect transistor, MOSFET, N-channel, 20V, 500mA, SC-89
Product QR code
Packaging SC-89
Delivery time
Packaging method
Standard packaging quantity 1
0.73  yuan 0.73yuan
10+:
$ 0.9909
50+:
$ 0.9395
100+:
$ 0.9028
300+:
$ 0.8808
500+:
$ 0.8588
1000+:
$ 0.8368
2500+:
$ 0.8037
5000+:
$ 0.7964
Quantity
10+
50+
100+
300+
500+
Price
$0.9909
$0.9395
$0.9028
$0.8808
$0.8588
Price $ 0.9909 $ 0.9395 $ 0.9028 $ 0.8808 $ 0.8588
Start batch production 10+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3817) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.7 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 250 mW

Technical parameters/threshold voltage: 900 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 600 mA

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SC-89

External dimensions/length: 1.7 mm

External dimensions/height: 0.8 mm

External dimensions/packaging: SC-89

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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SI1012X-T1-E3 SI1012X-T1-E3 Vishay Semiconductor 类似代替 SC-89
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); PD 0.25W(1/4W)
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SI1046X-T1-GE3 SI1046X-T1-GE3 Vishay Semiconductor 类似代替 SC-89-3
MOSFET 20V 606mA 0.25W(1/4W) 420mohm @ 4.5V
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SI1046X-T1-GE3 SI1046X-T1-GE3 Vishay Siliconix 类似代替 SC-89-3
MOSFET 20V 606mA 0.25W(1/4W) 420mohm @ 4.5V
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