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Model SI1046X-T1-GE3
Description MOSFET 20V 606mA 0.25W(1/4W) 420mohm @ 4.5V
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Brand: Vishay Siliconix
Packaging SC-89-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8645) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 250mW (Ta)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 606 mA

Technical parameters/Input capacitance (Ciss): 66pF @10V(Vds)

Technical parameters/dissipated power (Max): 250mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SC-89-3

External dimensions/packaging: SC-89-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix 类似代替 SC-89-3
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); Halogeenfree
PDF
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Semiconductor 类似代替 SC-89
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); Halogeenfree
PDF

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