Technical parameters/drain source resistance: 1.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 600 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-89-3
External dimensions/length: 1.7 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: SC-89-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1012X-T1
|
Vishay Semiconductor | 功能相似 |
MOSFET 20V 0.6A
|
|||
SI1012X-T1
|
Vishay Siliconix | 功能相似 | SC-89-3 |
MOSFET 20V 0.6A
|
||
SI1012X-T1-E3
|
Vishay Semiconductor | 类似代替 | SC-89 |
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); PD 0.25W(1/4W)
|
||
SI1046X-T1-GE3
|
Vishay Semiconductor | 类似代替 | SC-89-3 |
MOSFET 20V 606mA 0.25W(1/4W) 420mohm @ 4.5V
|
||
SI1046X-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-89-3 |
MOSFET 20V 606mA 0.25W(1/4W) 420mohm @ 4.5V
|
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