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Model SI1012X-T1
Description Trans MOSFET N-CH 20V 0.5A 3Pin SC-89 T/R
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Brand: Vishay Semiconductor
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Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4511) Minimum order quantity(1)
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Technical parameters/drain source resistance: 850 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 250 mW

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±6.00 V

Technical parameters/Continuous drain current (Ids): 500 mA

Package parameters/number of pins: 3

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1012X-T1-E3 SI1012X-T1-E3 Vishay Semiconductor 功能相似 SC-89
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); PD 0.25W(1/4W)
PDF
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix 功能相似 SC-89-3
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); Halogeenfree
PDF
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Semiconductor 功能相似 SC-89
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); Halogeenfree
PDF

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