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Model SI1012X-T1-E3
Description NChannel 1.8-V (G-S) MOSFET N-Channel 1.8-V (G-S) MOSFET
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Brand: Vishay Semiconductor
Packaging SC-89
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Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4363) Minimum order quantity(1)
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Technical parameters/drain source resistance: 1.25 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 250 mW

Technical parameters/threshold voltage: 900 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: 20 V

Technical parameters/breakdown voltage of gate source: ±6.00 V

Technical parameters/Continuous drain current (Ids): 500 mA

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SC-89

External dimensions/packaging: SC-89

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix 类似代替 SC-89-3
VISHAY SI1012X-T1-GE3 场效应管, MOSFET, N沟道, 20V, 500mA, SC-89
PDF
SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Semiconductor 类似代替 SC-89
VISHAY SI1012X-T1-GE3 场效应管, MOSFET, N沟道, 20V, 500mA, SC-89
PDF

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