Technical parameters/dissipated power: 1.6W (Ta)
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4838DY-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-T1
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
||
|
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
||
SI4838DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
||
SI4838DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
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