Technical parameters/drain source resistance: | 3.00 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.5 W |
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Technical parameters/drain source voltage (Vds): | 12 V |
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Technical parameters/Leakage source breakdown voltage: | 12.0 V |
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Technical parameters/breakdown voltage of gate source: | ±8.00 V |
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Technical parameters/Continuous drain current (Ids): | 25.0 A |
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Technical parameters/rise time: | 40 ns |
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Technical parameters/rated power (Max): | 1.6 W |
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Technical parameters/descent time: | 70 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2500 |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4838DY-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-T1
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Mosfet n-Ch 12V 17A 8-Soic
|
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