Technical parameters/drain source resistance: 3.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.5 W
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 25.0 A
Technical parameters/rise time: 40 ns
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4838DY-T1
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
||
|
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
||
SI4838DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
||
SI4838DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC |
Trans MOSFET N-CH 12V 17A 8Pin SOIC N T/R
|
||
SI4838DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Mosfet n-Ch 12V 17A 8-Soic
|
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