Technical parameters/drain source resistance: 0.003 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/leakage source breakdown voltage: 12.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 25.0 A
Technical parameters/rise time: 40 ns
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4838DY-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-T1
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 12V 25A 3.5W
|
||
SI4838DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Mosfet n-Ch 12V 17A 8-Soic
|
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