Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.80 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 7.90 A
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4102DY-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4102DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
Trans MOSFET N-CH 100V 2.7A 8Pin SOIC N T/R
|
||
SI4480EY
|
Vishay Siliconix | 功能相似 | SO-8 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
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