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Model SI5441DC-T1-GE3
Description MOSFET P-CH 20V 3.9A 1206-8
Product QR code
Brand: Vishay Siliconix
Packaging 1206
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9330) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.3W (Ta)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/dissipated power (Max): 1.3W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation (metric): 3216

Encapsulation parameters/Encapsulation: 1206

External dimensions/length: 3.2 mm

External dimensions/width: 1.6 mm

Dimensions/Packaging (Metric): 3216

External dimensions/packaging: 1206

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI5433BDC-T1-E3 SI5433BDC-T1-E3 VISHAY 类似代替 CHIP
MOSFET P-CH 20V 4.8A 1206-8
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SI5433BDC-T1-E3 SI5433BDC-T1-E3 Vishay Siliconix 类似代替 SMD-8
MOSFET P-CH 20V 4.8A 1206-8
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SI5433BDC-T1-E3 SI5433BDC-T1-E3 Vishay Semiconductor 类似代替
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SI5441BDC-T1-GE3 SI5441BDC-T1-GE3 Vishay Semiconductor 完全替代 1206
Trans MOSFET P-CH 20V 4.4A 8Pin Chip FET T/R
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SI5441DC-T1-E3 SI5441DC-T1-E3 Vishay Siliconix 完全替代 1206
MOSFET P-CH 20V 3.9A 1206-8
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SI5441DC-T1-E3 SI5441DC-T1-E3 Visay 完全替代
MOSFET P-CH 20V 3.9A 1206-8
SI5441DC-T1-E3 SI5441DC-T1-E3 VISHAY 完全替代 CHIP
MOSFET P-CH 20V 3.9A 1206-8
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SI5441DC-T1-E3 SI5441DC-T1-E3 Vishay Intertechnology 完全替代
MOSFET P-CH 20V 3.9A 1206-8

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