Technical parameters/drain source resistance: 55.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.30 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): -3.90 A
Technical parameters/rise time: 35 ns
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Chip
External dimensions/packaging: Chip
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5401DC-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 20V 5.2A 1206-8
|
|||
SI5443DC-T1-E3
|
Vishay Semiconductor | 完全替代 | ChipFET-8 |
MOSFET 20V 4.9A 2.5W
|
||
SI5443DC-T1-E3
|
VISHAY | 完全替代 | ChipFET-8 |
MOSFET 20V 4.9A 2.5W
|
||
SI5443DC-T1-E3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET 20V 4.9A 2.5W
|
||
SI5461EDC-T1-GE3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET 20V 6.2A 2.5W 45mohm @ 4.5V
|
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