Technical parameters/drain source resistance: 65.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.30 W
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): -3.60 A to 3.60 A
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: ChipFET-8
External dimensions/packaging: ChipFET-8
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5401DC-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 20V 5.2A 1206-8
|
|||
SI5441DC-T1-E3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET P-CH 20V 3.9A 1206-8
|
||
SI5441DC-T1-E3
|
Visay | 完全替代 |
MOSFET P-CH 20V 3.9A 1206-8
|
|||
SI5441DC-T1-E3
|
VISHAY | 完全替代 | CHIP |
MOSFET P-CH 20V 3.9A 1206-8
|
||
SI5441DC-T1-E3
|
Vishay Intertechnology | 完全替代 |
MOSFET P-CH 20V 3.9A 1206-8
|
|||
SI5461EDC-T1-GE3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET 20V 6.2A 2.5W 45mohm @ 4.5V
|
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