Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation (metric): 3216
Encapsulation parameters/Encapsulation: 1206
External dimensions/length: 3.2 mm
External dimensions/width: 1.6 mm
Dimensions/Packaging (Metric): 3216
External dimensions/packaging: 1206
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5401DC-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 20V 5.2A 1206-8
|
|||
SI5443DC-T1-E3
|
Vishay Semiconductor | 完全替代 | ChipFET-8 |
MOSFET 20V 4.9A 2.5W
|
||
SI5443DC-T1-E3
|
VISHAY | 完全替代 | ChipFET-8 |
MOSFET 20V 4.9A 2.5W
|
||
SI5443DC-T1-E3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET 20V 4.9A 2.5W
|
||
SI5461EDC-T1-GE3
|
Vishay Siliconix | 完全替代 | 1206 |
MOSFET 20V 6.2A 2.5W 45mohm @ 4.5V
|
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