Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5401DC-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 20V 5.2A 1206-8
|
|||
SI5433BDC-T1-GE3
|
VISHAY | 完全替代 | CHIP |
MOSFET P-CH 20V 4.8A 1206-8
|
||
SI5433BDC-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 20V 4.8A 1206-8
|
|||
SI5443DC-T1-E3
|
Vishay Semiconductor | 类似代替 | ChipFET-8 |
MOSFET 20V 4.9A 2.5W
|
||
SI5443DC-T1-E3
|
VISHAY | 类似代替 | ChipFET-8 |
MOSFET 20V 4.9A 2.5W
|
||
SI5443DC-T1-E3
|
Vishay Siliconix | 类似代替 | 1206 |
MOSFET 20V 4.9A 2.5W
|
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