Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 4.8A
Technical parameters/rise time: 35 ns
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4913DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET P-CH DUAL 20V 7.1A 8-SOIC
|
||
SI9933CDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
TRANSISTOR 4000mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI9933CDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
TRANSISTOR 4000mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI9934BDY-T1-GE3
|
Vishay Semiconductor | 完全替代 | SOIC |
MOSFET 12V 6.4A 2W 35mohm @ 4.5V
|
||
SI9934BDY-T1-GE3
|
VISHAY | 完全替代 | SO-8 |
MOSFET 12V 6.4A 2W 35mohm @ 4.5V
|
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