Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.10 W |
|
Technical parameters/drain source voltage (Vds): | 12 V |
|
Technical parameters/Continuous drain current (Ids): | 4.8A |
|
Technical parameters/rise time: | 35 ns |
|
Technical parameters/descent time: | 50 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.1 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO-8 |
|
Dimensions/Packaging: | SO-8 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI9933CDY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
P 通道 MOSFET，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
SI9933CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
P 通道 MOSFET，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
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