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Description MOSFET, Dual P-CH, Vds 20V, Vgs +/- 20V, Rds(on) 48mohm, Id 4A, SO8, Pd 3.1W
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Packaging SOIC-8
Delivery time
Packaging method
Standard packaging quantity 1
1.92  yuan 1.92yuan
5+:
$ 2.5893
25+:
$ 2.3975
50+:
$ 2.2632
100+:
$ 2.2057
500+:
$ 2.1673
2500+:
$ 2.1194
5000+:
$ 2.1002
10000+:
$ 2.0714
Quantity
5+
25+
50+
100+
500+
Price
$2.5893
$2.3975
$2.2632
$2.2057
$2.1673
Price $ 2.5893 $ 2.3975 $ 2.2632 $ 2.2057 $ 2.1673
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7531) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.094 Ω

Technical parameters/dissipated power: 1.14 W

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Input capacitance (Ciss): 665pF @10V(Vds)

Technical parameters/rated power (Max): 3.1 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/height: 1.55 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -50℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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