Technical parameters/drain source resistance: 0.094 Ω
Technical parameters/dissipated power: 1.14 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 665pF @10V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -50℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4913DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET P-CH DUAL 20V 7.1A 8-SOIC
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SI4913DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET 20V 9.4A 2W 15mohm @ 4.5V
|
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SI4913DY-T1-GE3
|
VISHAY | 类似代替 | SOIC |
MOSFET 20V 9.4A 2W 15mohm @ 4.5V
|
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SI9933CDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
SI9933CDY-T1-E3 编带
|
||
SI9933CDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
SI9933CDY-T1-E3 编带
|
||
SI9934BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET DUAL P-CH 12V 4.8A 8-SOIC
|
||
SI9934BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET DUAL P-CH 12V 4.8A 8-SOIC
|
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