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Model SI9933CDY-T1-E3
Description VISHAY SI9933CDY-T1-E3 Dual Field Effect Transistor, MOSFET, Dual P-channel, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.26  yuan 1.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4331) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.048 Ω

 

Technical parameters/polarity:

P-Channel, Dual P-Channel

 

Technical parameters/dissipated power:

3.1 W

 

Technical parameters/drain source voltage (Vds):

-20.0 V

 

Technical parameters/Continuous drain current (Ids):

-4.00 A

 

Technical parameters/rise time:

50 ns

 

Technical parameters/Input capacitance (Ciss):

665pF @10V(Vds)

 

Technical parameters/descent time:

13 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-50 ℃

 

Technical parameters/dissipated power (Max):

2000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC

 

Dimensions/Height:

1.55 mm

 

Dimensions/Packaging:

SOIC

 

Physical parameters/operating temperature:

-50℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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