Technical parameters/polarity: Dual P-Channel
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 9.40 A
Technical parameters/rated power (Max): 1.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4913DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET P-CH DUAL 20V 7.1A 8-SOIC
|
||
SI9933CDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
TRANSISTOR 4000mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI9933CDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
TRANSISTOR 4000mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI9934BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET DUAL P-CH 12V 4.8A 8-SOIC
|
||
SI9934BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET DUAL P-CH 12V 4.8A 8-SOIC
|
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