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Model SI9933CDY-T1-GE3

Description 双P通道20 - V（D -S）的MOSFET Dual P-Channel 20-V (D-S) MOSFET

Brand: VISHAY

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.048 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	2 W
Technical parameters/threshold voltage:	1.4 V
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Continuous drain current (Ids):	4A
Technical parameters/Input capacitance (Ciss):	665pF @10V(Vds)
Technical parameters/rated power (Max):	2 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-50 ℃
Technical parameters/dissipated power (Max):	2000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.55 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-50℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2500
Other/Manufacturing Applications:	power management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

Alternative material

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