Technical parameters/drain source resistance: | 0.028 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.1 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC |
|
Dimensions/Packaging: | SOIC |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI9933CDY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
P 通道 MOSFET,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SI9933CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
P 通道 MOSFET,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review