Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.015 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/Input capacitance (Ciss): 1200pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6894A
|
Fairchild | 功能相似 | SOIC-8 |
双N沟道逻辑电平PWM优化的PowerTrench MOSFET Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
|
||
SI4966DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
|
||
SI4966DY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
|
||
|
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET DUAL N-CH 20V 6.2A 8-SOIC
|
||
SI9926BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET DUAL N-CH 20V 6.2A 8-SOIC
|
||
SI9926CDY-T1-E3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET DUAL N-CH 20V 8A 8-SOIC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review