Technical parameters/drain source resistance: 25.0 mΩ
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 7.10 A
Technical parameters/rise time: 40 ns
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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